CR Micro SiC MOSFET Distributor | 650 V to 2200 V Class
Genuine CR Micro SiC MOSFETs from 650 V to 2200 V across Gen2 to Gen4 for EV, solar, storage and high-density supplies.
CR Micro SiC MOSFET Overview
BeiLuo distributes genuine CR Micro silicon-carbide MOSFETs, a portfolio that has progressed through multiple generations and now spans 650 V to 2200 V. Silicon carbide replaces silicon in the drift region with a wide-bandgap material that sustains a far higher critical field, so a SiC MOSFET can be both thinner and more lightly doped than an equivalent silicon device. The practical result is a much lower on-resistance per unit area, negligible reverse-recovery charge and stable switching at high temperature, which lets converters run at higher frequency with smaller magnetics and lower cooling cost. These characteristics make CR Micro SiC MOSFETs a strong fit for electric-vehicle traction inverters and on-board chargers, solar string inverters, energy-storage converters and high-density power supplies. The portfolio includes the fourth-generation 1200 V CRXQ75M120G4Z rated at 70 A in TO-247, the third-generation 750 V CRXF300M075G3 rated at 160 A in TOLL and QDPAK, and devices extending to 2200 V for high-voltage rails. CR Micro also supplies matching SiC junction-barrier-Schottky diodes so the freewheeling path uses the same material and switching speed. Every part is factory-traceable with import declaration, certificate of origin and RoHS documents. Our FAE team helps you weigh RDS(on), gate charge, threshold-voltage stability and layout parasitics before selecting a generation for your design.
CR Micro SiC MOSFET Product Range
In-stock SiC MOSFET series available now, each with import documentation and FAE support. Click a model for full specifications and purchase information.
| Model | VDS | ID | RDS(on) | Package | Generation |
|---|---|---|---|---|---|
| CRXQ75M120G4Z | 1200 V | 70 A | 34 mOhm typ / 45 mOhm max | TO-247 | 4th generation |
| CRXF300M075G3 | 750 V | 160 A | 13 mOhm typ / 19 mOhm max | TOLL / QDPAK | 3rd generation |
Frequently Asked Questions
How do I use the SiC MOSFET table to shortlist a part?
Read the blocking voltage in VDS against your DC-link class, then narrow by continuous current in ID and by conduction loss in RDS(on). Package and Generation decide the mechanical fit and switching behaviour.
Filter by voltage and current first, then compare RDS(on) and gate charge at your frequency.
Which generation should I choose: Gen3 or Gen4?
Later generations typically deliver lower RDS(on) and improved figure of merit for a given die size, which helps raise power density. Earlier generations remain cost-effective for established designs.
Match the generation to your efficiency target and cost budget.
How do I drive a SiC MOSFET reliably?
SiC MOSFETs switch fast, so keep the gate loop tight, use a gate resistor tuned to your dv/dt target, and consider a negative off-state voltage for margin against parasitic turn-on. Respect the recommended gate-source window strictly.
Our FAE team can review your gate-drive design.
What diode should pair with a SiC MOSFET?
Pair it with a SiC JBS diode of the same voltage class so the freewheeling path has negligible reverse-recovery charge and consistent temperature behaviour. The companion diode keeps switching loss low in bridge topologies.
See the SiC diode range for matched parts.
Are CR Micro SiC MOSFETs in stock and documented?
Selected SiC MOSFET models are held in regional stock and every order ships with an import declaration, certificate of origin and RoHS file. The datasheet downloads from each product page.
Contact us for current stock, sample and lead-time information.
Documentation
Need a quote or samples?
Request pricing, samples or technical consultation for CR Micro SiC MOSFET products. Our FAE team responds within one business day.
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