CR Micro SiC JBS Diode Distributor | 650 V to 1200 V
Genuine CR Micro SiC JBS diodes from 650 V to 1200 V for PFC, EV chargers, solar inverters and server power.
CR Micro SiC Diode Overview
BeiLuo supplies genuine CR Micro silicon-carbide junction-barrier-Schottky (JBS) diodes, a family that pairs the Schottky-like low forward drop and zero reverse-recovery of a majority-carrier device with a P-N junction that clamps surge current. Because a SiC JBS diode stores no significant reverse-recovery charge, it removes the switching loss and the current spike that a silicon PiN diode contributes when a MOSFET or IGBT turns on, which is why it is the standard freewheeling and power-factor-correction rectifier in high-frequency converters. CR Micro has developed the family across multiple generations, reducing forward voltage and improving surge ruggedness with each step; the portfolio covers 650 V and 1200 V classes in current ratings suited to adapters, server power supplies, solar inverters and on-board chargers for electric vehicles. Representative parts include the third-generation 650 V CRXB08D065G3 and the second-generation 650 V CRXI10D065G2, which carries a total capacitive charge of 28 nC. These diodes are frequently designed alongside CR Micro SiC MOSFETs so that the switching path uses one wide-bandgap material and a consistent temperature behaviour. Every order ships with factory traceability plus import declaration, certificate of origin and RoHS documentation, and BeiLuo's FAE team can help you match diode current, thermal impedance and paralleling strategy to your topology.
CR Micro SiC Diode Product Range
In-stock SiC Diode series available now, each with import documentation and FAE support. Click a model for full specifications and purchase information.
| Model | VRRM | IF | Package | Generation |
|---|---|---|---|---|
| CRXB08D065G3 | 650 V | 8 A | TO-220 | 3rd generation |
| CRXI10D065G2 | 650 V | 10 A | TO-220 | 2nd generation |
Frequently Asked Questions
How do I use the SiC diode table to shortlist a part?
Match the repetitive reverse voltage in VRRM to your bus class, then narrow by forward current in IF. Package and Generation decide the mechanical fit and the loss/noise trade-off.
Filter by voltage and current first, then compare forward voltage and surge rating.
Why use a SiC JBS diode instead of a silicon PiN diode?
A SiC JBS diode stores essentially no reverse-recovery charge, so it eliminates the recovery loss and current spike a silicon PiN diode adds at turn-on. This lowers switching loss and EMI, especially at high frequency.
It is the natural freewheeling partner for SiC MOSFETs and fast IGBTs.
How does the JBS structure improve surge capability?
The junction-barrier-Schottky structure embeds a P-N junction beneath the Schottky contact, which clamps surge current and raises avalanche ruggedness while keeping the low forward drop of a majority-carrier diode.
This makes it robust in PFC and rectifier stages with inrush events.
Can I parallel SiC diodes for higher current?
SiC JBS diodes have a positive temperature coefficient of forward voltage, which encourages current sharing when paralleled. Match the layout parasitics and keep the parts thermally coupled for even sharing.
Our FAE team can review your paralleling layout.
Are CR Micro SiC diodes in stock and documented?
The SiC JBS diodes shown here are normally held in regional stock and ship with an import declaration, certificate of origin and RoHS file. The datasheet downloads from each product page.
Contact us for current stock, samples and lead time.
Documentation
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Request pricing, samples or technical consultation for CR Micro SiC Diode products. Our FAE team responds within one business day.
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