CRXB08D065G3
650 V Gen3 SiC JBS diode, 8 A, near-zero reverse recovery, for PFC and high-frequency rectification.
650 V third-generation SiC junction-barrier-Schottky diode rated 8 A with low forward voltage and near-zero reverse recovery, for power-factor correction and high-frequency rectification.
FAE Professional Review
The CRXB08D065G3 is the third-generation SiC JBS diode we recommend for PFC and secondary rectification where reverse-recovery loss is the bottleneck. Because it stores essentially no recovery charge, it removes the turn-on current spike that a silicon PiN diode injects, lowering both switching loss and EMI. Pair it with a Super Junction MOSFET or SiC MOSFET of the same class and the whole switching path benefits. For higher current, step up within the SiC JBS range.
| Parameter | Value |
|---|---|
| VRRM | 650 V |
| IF | 8 A |
| Package | TO-220 |
| Generation | 3rd generation |
Application Circuits
Power factor correction
Reference circuits and application schematics for Power factor correction are available from our FAE team.
High-frequency rectification
Reference circuits and application schematics for High-frequency rectification are available from our FAE team.
LED and adapter supplies
Reference circuits and application schematics for LED and adapter supplies are available from our FAE team.
Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.
Related Documents
Alternative Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| CRXI10D065G2 | TO-220 | Higher-current 650 V SiC JBS diode from the second generation | View |
Complementary Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| CRXQ75M120G4Z | TO-247 | 1200 V SiC MOSFET for the switching position | View |
| CRJQ80N65G4FQ | TO-247 | 650 V Super Junction MOSFET for the PFC switch | View |
Recommended Complementary Products
Frequently Asked Questions
What designs is the CRXB08D065G3 best suited to?
It fits 650 V PFC and rectifier stages such as adapters, LED drivers and the secondary side of high-frequency supplies, where near-zero reverse recovery cuts switching loss and EMI at 8 A.
For higher current, the CRXI10D065G2 is the next step.
Why pair it with a Super Junction MOSFET?
A Super Junction MOSFET such as the CRJQ80N65G4FQ switches in the same 650 V class, and the SiC JBS diode removes the recovery loss the MOSFET would otherwise see at turn-on. Together they give a quiet, efficient hard-switched stage.
See the MOSFET range for the switch.
How does the JBS structure help with surges?
The embedded P-N junction beneath the Schottky contact clamps surge current and raises avalanche ruggedness, so the diode survives inrush and fault events while keeping a low forward drop.
This robustness suits PFC and rectifier stages.
Can I parallel diodes for more current?
SiC JBS diodes share current well because forward voltage rises with temperature. Keep the layout symmetric and the parts thermally coupled for even sharing.
Our FAE team can review your paralleling layout.
Is the part genuine and in stock?
The CRXB08D065G3 is normally available from regional stock with the import declaration, certificate of origin and RoHS file included. The datasheet downloads from this page.
Request a quote for current stock and lead time.