CR Micro SiC Diode

CRXI10D065G2

CR Micro SiC Diode Gen2 SiC JBS In Stock

650 V Gen2 SiC JBS diode, 10 A, 28 nC total capacitive charge, for PFC and EV charger rectification.

650 V second-generation SiC junction-barrier-Schottky diode rated 10 A with a total capacitive charge of 28 nC, for PFC, EV chargers and solar rectification with minimal switching loss.

FAE Professional Review

The CRXI10D065G2 is a second-generation 650 V SiC JBS diode with a low 28 nC total capacitive charge, which keeps the charge-related switching loss small even at high frequency. It is the companion part we recommend for 650 V PFC and secondary rectification when you want SiC benefits at a cost-effective point in the roadmap. Match it with a Super Junction or SiC MOSFET of the same class and confirm the thermal path, since recovery-free behaviour still leaves conduction loss to manage.
ParameterValue
VRRM650 V
IF10 A
PackageTO-220
Generation2nd generation

Application Circuits

Application

Power factor correction

Reference circuits and application schematics for Power factor correction are available from our FAE team.

Application

EV on-board chargers

Reference circuits and application schematics for EV on-board chargers are available from our FAE team.

Application

Solar inverters

Reference circuits and application schematics for Solar inverters are available from our FAE team.

Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.

Related Documents

  • Manufacturer Datasheet - CRXI10D065G2 Download
  • Import Declaration - CRXI10D065G2 Download
  • Certificate of Origin Download
  • RoHS Compliance Download

Alternative Part Numbers

ModelPackageNoteAction
CRXB08D065G3 TO-220 Third-generation 650 V SiC JBS diode at lower current View

Complementary Part Numbers

ModelPackageNoteAction
CRXF300M075G3 TOLL / QDPAK 750 V SiC MOSFET for high-current switching View
CRGMP25T120DF2C3 PIM module 1200 V IGBT module for the inverter stage View

Frequently Asked Questions

What designs is the CRXI10D065G2 best suited to?

It targets 650 V PFC stages for EV on-board chargers, solar inverters and server supplies, where 10 A and a low 28 nC total capacitive charge keep switching loss small at high frequency.

For lower current, the CRXB08D065G3 is a third-generation option.

Request this SiC diode for your design

What does total capacitive charge mean for my design?

Total capacitive charge, quoted here at 28 nC, is the charge the diode must source and sink each switching cycle even with no reverse recovery. Lower charge means lower charge-related loss at high frequency.

Estimate that loss at your frequency before choosing.

Ask us to compare diode losses

Which MOSFET pairs well with this diode?

Pair it with a 650 V to 750 V device such as the CRJQ80N65G4FQ Super Junction MOSFET or the CRXF300M075G3 SiC MOSFET so the switching path uses consistent technology and temperature behaviour.

See the MOSFET range for the switch.

View CR Micro MOSFETs

Can I use it in EV charger PFC stages?

Yes. Its 650 V class and recovery-free behaviour suit the PFC and DC-DC rectification of on-board chargers and off-board charging piles, where high frequency and low loss are required.

Our FAE team can help you match it to your topology.

Discuss your charger design

Is the part genuine and in stock?

The CRXI10D065G2 is normally available from regional stock with the import declaration, certificate of origin and RoHS file included. The datasheet downloads from this page.

Request a quote for current stock and lead time.

Request stock, sample or a quote