CRGMP25T120DF2C3
1200 V / 25 A PIM IGBT module for industrial drives, solar inverters and UPS power stages.
1200 V / 25 A PIM IGBT power module with a Trench Field-Stop bridge and matched freewheeling diodes, suited to medium-power motor drives, inverters and solar conversion stages.
FAE Professional Review
The CRGMP25T120DF2C3 moves the CRGMP platform into the 25 A class, which is the sweet spot for industrial drives and solar inverters around 7.5 kW to 15 kW. The integrated bridge keeps the thermal path consistent across the three phases, and the diodes are matched to the IGBT so all switching loss is managed within one package. Budget the DC-link decoupling and gate-return routing early, because these set the achievable dv/dt and EMC margin at 1200 V.
| Parameter | Value |
|---|---|
| VCES | 1200 V |
| IC | 25 A |
| Package | PIM module |
| Circuit | PIM |
| Technology | Trench Field-Stop |
Application Circuits
Industrial motor drives
Reference circuits and application schematics for Industrial motor drives are available from our FAE team.
Solar inverters
Reference circuits and application schematics for Solar inverters are available from our FAE team.
Uninterruptible power supplies
Reference circuits and application schematics for Uninterruptible power supplies are available from our FAE team.
Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.
Related Documents
Alternative Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| CRGMP15T120DF1C3 | PIM module | Lower-current PIM module in the same 1200 V class | View |
Complementary Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| CRXQ75M120G4Z | TO-247 | 1200 V SiC MOSFET alternative for high-frequency stages | View |
| CRXI10D065G2 | TO-220 | SiC JBS diode for the rectifier path | View |
Recommended Complementary Products
Frequently Asked Questions
What applications suit the CRGMP25T120DF2C3?
It targets medium-power industrial drives, solar inverters and UPS stages around 7.5 kW to 15 kW, where a 1200 V integrated bridge balances loss, cost and assembly effort.
For high switching frequency, compare the 1200 V SiC MOSFET alternative.
IGBT module or 1200 V SiC MOSFET: which should I choose?
The IGBT module is the cost-effective choice for hard-switched operation at moderate frequency, while a 1200 V SiC MOSFET such as the CRXQ75M120G4Z wins when you need higher switching frequency, lower loss and smaller magnetics.
Choose by frequency target and cost budget.
How do I drive the module reliably?
Use a gate resistor tuned to your dv/dt and EMI targets, add desaturation protection, and keep the gate loop short with a dedicated emitter return. A negative gate supply helps prevent parasitic turn-on at 1200 V.
Our application note covers protection and dead-time.
What about losses at my switching frequency?
Conduction loss scales with VCE(sat) times current and duty cycle, while switching loss scales with turn-off energy and frequency. Below about 16 kHz the Trench Field-Stop module balances both terms well.
Our FAE team can run a quick loss comparison.
Is the part genuine and in stock?
The CRGMP25T120DF2C3 is normally available from regional stock with the import declaration, certificate of origin and RoHS file included. The datasheet downloads from this page.
Request a quote for current stock and lead time.