CRXQ75M120G4Z
1200 V Gen4 SiC MOSFET, 70 A, 34 mOhm typical, TO-247, for EV traction and high-frequency conversion.
1200 V fourth-generation SiC MOSFET rated 70 A with 34 mOhm typical on-resistance in a TO-247 package, built for EV traction inverters, on-board chargers and high-frequency solar conversion.
FAE Professional Review
The CRXQ75M120G4Z is our headline 1200 V SiC part for traction and charging designs. The fourth-generation cell brings on-resistance down to 34 mOhm typical while keeping the fast, temperature-stable switching that lets you raise frequency and shrink magnetics. SiC switches hard, so treat the gate loop and DC-link layout as first-class design tasks: minimise the power-loop inductance and tune the gate resistor to your dv/dt target. Paired with a CRXB08D065G3 or CRXI10D065G2 diode, the freewheeling path stays loss-free and quiet.
| Parameter | Value |
|---|---|
| VDS | 1200 V |
| ID | 70 A |
| RDS(on) | 34 mOhm typ / 45 mOhm max |
| Package | TO-247 |
| Generation | 4th generation |
Application Circuits
EV traction inverters
Reference circuits and application schematics for EV traction inverters are available from our FAE team.
On-board chargers
Reference circuits and application schematics for On-board chargers are available from our FAE team.
High-frequency solar conversion
Reference circuits and application schematics for High-frequency solar conversion are available from our FAE team.
Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.
Related Documents
Alternative Part Numbers
No alternative parts listed.
Complementary Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| CRXB08D065G3 | TO-220 | 650 V SiC JBS diode for the gate-drive auxiliary supply | View |
| CRGMP25T120DF2C3 | PIM module | 1200 V IGBT module for a cost-optimised power stage | View |
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Frequently Asked Questions
What designs is the CRXQ75M120G4Z best suited to?
It targets 1200 V high-frequency conversion: EV traction inverters, on-board chargers and solar or storage converters where low RDS(on) and fast switching cut size and cooling cost.
If your bus allows 750 V, the CRFX300M075G3 may be more cost-effective.
How do I get the best switching behaviour?
Minimise the power-loop inductance with a tight DC-link layout and decoupling, keep the gate loop short, and tune the gate resistor to your dv/dt and EMI targets. Consider a negative off-state voltage for margin against parasitic turn-on.
Our FAE team can review your gate-drive design.
Which diode pairs with this MOSFET?
Use a SiC JBS diode of the same voltage class, such as the CRXB08D065G3 or CRXI10D065G2 for lower-voltage rails, so the freewheeling path has negligible reverse-recovery charge and consistent temperature behaviour.
See the SiC diode range for matched parts.
How does it compare with a 1200 V IGBT module?
The SiC MOSFET switches faster with lower loss and smaller magnetics, while the CRGMP25T120DF2C3 IGBT module is more cost-effective at moderate frequency. Choose SiC when frequency, efficiency or size dominate.
Compare the two before deciding.
Is the part genuine and documented?
BeiLuo supplies factory-traceable CRXQ75M120G4Z parts with an import declaration, certificate of origin and RoHS file on every order. The datasheet downloads from this page.
Contact us for stock, samples and lead time.