CRXF300M075G3
750 V Gen3 SiC MOSFET, 160 A, 13 mOhm typical, TOLL/QDPAK, for high-density supplies and storage.
750 V third-generation SiC MOSFET rated 160 A with 13 mOhm typical on-resistance in TOLL and QDPAK packages, designed for high-current, high-density power supplies and storage converters.
FAE Professional Review
The CRXF300M075G3 shows how far SiC has come at 750 V: 160 A and 13 mOhm typical in a surface-mount TOLL or QDPAK outline that keeps height and loop inductance low. This is the part we spec when a 48 V or 400 V architecture needs very high current density without paralleling many silicon devices. The surface-mount package demands careful layout for thermal spreading and current sharing, but the payoff is a compact, efficient converter. Confirm your current-sharing and thermal path with our FAE team before layout sign-off.
| Parameter | Value |
|---|---|
| VDS | 750 V |
| ID | 160 A |
| RDS(on) | 13 mOhm typ / 19 mOhm max |
| Package | TOLL / QDPAK |
| Generation | 3rd generation |
Application Circuits
High-density power supplies
Reference circuits and application schematics for High-density power supplies are available from our FAE team.
Energy-storage converters
Reference circuits and application schematics for Energy-storage converters are available from our FAE team.
Data-center power
Reference circuits and application schematics for Data-center power are available from our FAE team.
Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.
Related Documents
Alternative Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| CRXQ75M120G4Z | TO-247 | 1200 V SiC MOSFET where a higher blocking class is required | View |
Complementary Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| CRXI10D065G2 | TO-220 | 650 V SiC JBS diode for the rectifier path | View |
| CRJSH38N65G4FQ | T2PAK | Super Junction MOSFET for the auxiliary supply | View |
Recommended Complementary Products
Frequently Asked Questions
What designs is the CRXF300M075G3 best suited to?
It targets high-current 750 V conversion such as high-density server or data-center supplies and energy-storage converters, where 160 A and 13 mOhm typical RDS(on) give very high power density.
Its surface-mount outline suits compact, automated boards.
How do I keep a high-current SiC design cool?
Spread current across a large, well-coupled copper area, use a low thermal-impedance interface and verify junction temperature under worst-case load. Because RDS(on) rises with temperature, confirm the hot condition, not the bench condition.
Our FAE team can review your thermal and layout plan.
Do I need to parallel this part for higher current?
At 160 A the single device covers a lot of ground, but if you need more current, SiC MOSFETs share current reasonably because RDS(on) rises with temperature. Match layout parasitics and keep the parts thermally coupled.
We can advise on paralleling and gate-drive sharing.
Which diode pairs with this MOSFET?
Pair it with a SiC JBS diode in the same voltage class, such as the CRXI10D065G2 for 650 V rails, so the freewheeling path has negligible reverse-recovery charge.
See the SiC diode range for matched parts.
What is the stock and documentation status?
The CRXF300M075G3 is available on request with factory traceability and ships with an import declaration, certificate of origin and RoHS file. The datasheet downloads from this page.
Contact us for samples and lead time.