CR Micro MOSFET

CRJSH38N65G4FQ

CR Micro MOSFET Super Junction G4 In Stock

650 V Super Junction MOSFET, 72 A, 27 mOhm typical, T2PAK, for high-current PFC and server power.

650 V Super Junction N-channel MOSFET rated 72 A with 27 mOhm typical on-resistance in a low-profile T2PAK package, targeting high-current PFC, server power and motor-drive auxiliary stages.

FAE Professional Review

When a design needs more than the CRJQ80N65G4FQ can deliver, the CRJSH38N65G4FQ is the natural step up: 72 A and 27 mOhm typical in a T2PAK outline that reduces height and source inductance relative to a conventional TO-247. The lower inductance pays dividends in fast-switching PFC and LLC stages, where gate-loop and source parasitics drive ringing. Keep the current-sense and gate-return paths separate, and the part will hold its datasheet switching behaviour in production.
ParameterValue
VDS650 V
ID72 A
RDS(on)27 mOhm typ / 38 mOhm max
PackageT2PAK
TechnologySuper Junction

Application Circuits

Application

High-current power factor correction

Reference circuits and application schematics for High-current power factor correction are available from our FAE team.

Application

Server and telecom power

Reference circuits and application schematics for Server and telecom power are available from our FAE team.

Application

Motor-drive auxiliary supplies

Reference circuits and application schematics for Motor-drive auxiliary supplies are available from our FAE team.

Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.

Related Documents

  • Manufacturer Datasheet - CRJSH38N65G4FQ Download
  • Import Declaration - CRJSH38N65G4FQ Download
  • Certificate of Origin Download
  • RoHS Compliance Download

Alternative Part Numbers

ModelPackageNoteAction
CRJQ80N65G4FQ TO-247 TO-247 alternative with lower current in the same voltage class View

Complementary Part Numbers

ModelPackageNoteAction
CRGMP25T120DF2C3 PIM module 1200 V PIM module for the inverter stage View
CRXI10D065G2 TO-220 650 V SiC JBS diode for the rectifier path View

Frequently Asked Questions

What designs is the CRJSH38N65G4FQ best suited to?

It targets high-current 650 V stages such as server PSU PFC, high-power LLC converters and inverter auxiliary rails, where 72 A and 27 mOhm typical RDS(on) keep conduction loss low.

The T2PAK package also suits height-constrained boards.

Request this MOSFET for your design

Why does the T2PAK package matter?

The T2PAK outline is shorter than a TO-247 and presents lower source inductance, which reduces gate-loop ringing and switching loss in fast converters. It also eases automated assembly on modern lines.

Confirm your board height and layout keep the thermal pad well coupled.

Ask for a package and layout review

How do I manage heat at 72 A?

At this current, thermal design dominates. Use a low thermal-impedance interface, spread the copper for heat transfer and verify junction temperature at maximum duty cycle and ambient.

We can review your heatsink and airflow assumptions.

Request a thermal review

How does it compare with the CRJQ80N65G4FQ?

The CRJSH38N65G4FQ delivers more current and lower RDS(on) in a T2PAK package, while the CRJQ80N65G4FQ keeps the TO-247 footprint at a lower current rating. The choice is set by current level and available board height.

Compare the two on this page before deciding.

Compare with the CRJQ80N65G4FQ

Is the part genuine and in stock?

The CRJSH38N65G4FQ is normally available from regional stock with the import declaration, certificate of origin and RoHS file included. The datasheet downloads from this page.

Request a quote for current stock and lead time.

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