CR Micro MOSFET

CRJQ80N65G4FQ

CR Micro MOSFET Super Junction G4 In Stock

650 V Super Junction MOSFET, 33 A, 69 mOhm typical, TO-247, for PFC and switched-mode supplies.

650 V Super Junction N-channel MOSFET rated 33 A with 69 mOhm typical on-resistance in a TO-247 package, aimed at power-factor-correction stages, switched-mode supplies and inverter auxiliary rails.

FAE Professional Review

The CRJQ80N65G4FQ is the part we specify most often for 650 V hard-switched stages in the 100 W to 1 kW range. The charge-balanced Super Junction drift region keeps conduction loss low at 33 A, and the TO-247 outline gives a robust thermal path without the isolation complexity of a fully isolated package. For higher current in the same voltage class, step up to the CRJSH38N65G4FQ, which drops RDS(on) further and moves to the T2PAK outline to trim height and parasitic inductance.
ParameterValue
VDS650 V
ID33 A
RDS(on)69 mOhm typ / 80 mOhm max
PackageTO-247
TechnologySuper Junction

Application Circuits

Application

Power factor correction

Reference circuits and application schematics for Power factor correction are available from our FAE team.

Application

Switched-mode power supplies

Reference circuits and application schematics for Switched-mode power supplies are available from our FAE team.

Application

Inverter auxiliary supplies

Reference circuits and application schematics for Inverter auxiliary supplies are available from our FAE team.

Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.

Related Documents

  • Manufacturer Datasheet - CRJQ80N65G4FQ Download
  • Import Declaration - CRJQ80N65G4FQ Download
  • Certificate of Origin Download
  • RoHS Compliance Download

Alternative Part Numbers

ModelPackageNoteAction
CRJSH38N65G4FQ T2PAK Higher-current T2PAK alternative in the same 650 V class View

Complementary Part Numbers

ModelPackageNoteAction
CRGMP15T120DF1C3 PIM module 1200 V PIM module for the downstream inverter stage View
CRXB08D065G3 TO-220 650 V SiC JBS diode for the PFC freewheeling path View

Frequently Asked Questions

What designs is the CRJQ80N65G4FQ best suited to?

It fits 650 V hard-switched stages such as PFC front ends, flyback and LLC supplies and inverter auxiliary rails, where 33 A of current and 69 mOhm typical on-resistance balance loss and cost.

If you need higher current, the CRJSH38N65G4FQ is the sibling part.

Request this MOSFET for your supply

How should I drive the gate and manage EMI?

Use a gate resistor tuned to your dv/dt and EMI target, keep the gate loop short and return the source directly to the driver. A small snubber or ferrite can damp high-frequency ringing if the layout is tight.

Our Super Junction troubleshooting article covers oscillation and EMI fixes.

Read the Super Junction MOSFET troubleshooting article

What are the practical losses at my switching frequency?

Conduction loss scales with RDS(on) times RMS current squared, and switching loss scales with gate charge and output capacitance times frequency. Below about 100 kHz this part balances both terms well.

Our FAE team can estimate both at your operating point.

Ask us to estimate your losses

How does it compare with the CRJSH38N65G4FQ?

Both are 650 V Super Junction parts, but the CRJSH38N65G4FQ carries a higher 72 A rating and a lower 27 mOhm typical RDS(on) in a T2PAK package. The CRJQ80N65G4FQ keeps the familiar TO-247 footprint at lower cost.

Choose by current level and package preference.

Compare with the CRJSH38N65G4FQ

Is the part genuine and what documents ship with it?

BeiLuo supplies factory-traceable CRJQ80N65G4FQ parts with an import declaration, certificate of origin and RoHS file on every order. Stock is normally available and the datasheet downloads here.

Order samples to validate the device before production.

Request stock, sample or a quote