Always-On Power for Networks
Telecommunications networks and data centers consume a significant share of global electricity, and every fraction of a percent of efficiency improvement saves enormous amounts of energy and cost at scale. The power chains inside base-station rectifiers, servers and network switches share a common architecture: an AC-DC power-factor-correction front end, an isolated DC-DC converter, and low-voltage distribution to the loads. Each stage is an opportunity to reduce loss, and the devices chosen determine how much loss is unavoidable. China Resources Microelectronics, or CR Micro, provides the Super Junction MOSFETs and SiC JBS diodes that make an efficient chain possible, and BeiLuo distributes them with the support telecom and data-center designers need.
Power-Factor-Correction Front End
The power chain begins with active power-factor correction, which draws a clean sinusoidal current from the mains while boosting the voltage to a regulated DC bus. Two CRJQ80N65G4FQ Super Junction MOSFETs can form an interleaved boost stage. This 650 V device is rated for 33 A with 69 mΩ typical and 80 mΩ maximum on-resistance in a TO-247 package, and its low on-resistance minimises conduction loss while its low gate charge keeps switching loss modest. Where more current or a surface-mount package is preferred, the CRJSH38N65G4FQ offers 72 A with 27 mΩ typical on-resistance in a T2PAK package.
Meeting Harmonic Standards
Regulators require equipment to limit the harmonic content it draws from the mains. Active power-factor correction with a well-controlled current loop keeps the input current close to sinusoidal, and the fast switching enabled by Super Junction devices allows a high loop bandwidth without excessive loss. The result is a design that meets harmonic limits while maintaining efficiency across the load range, including the light-load conditions that dominate in always-on infrastructure.
Isolated DC-DC Conversion
After the PFC stage, an isolated DC-DC converter produces the regulated output that the load requires. In a typical telecom rectifier this is an LLC or phase-shifted full bridge operating at high frequency to shrink the transformer. The primary switches must handle the full bus voltage and the circulating current, so low on-resistance and low gate charge are both valuable. The CRJSH38N65G4FQ serves this role well, and its surface-mount package helps reduce board height in a dense supply.
Soft Switching and Loss
Resonant and phase-shifted topologies achieve soft switching across much of the load range, which greatly reduces turn-on loss. The remaining loss is dominated by conduction and by the rectification stage. Choosing devices with low conduction loss on the primary and low-recovery diodes on the secondary therefore has a direct effect on end-to-end efficiency.
Secondary Rectification with SiC JBS Diodes
The secondary rectifier carries the full output current and switches at the converter frequency, so silicon diodes there suffer reverse-recovery loss that grows as frequency rises. CR Micro SiC junction-barrier-Schottky diodes remove that loss. The CRXI10D065G2 is a 650 V 10 A second-generation device with a low capacitive charge of 28 nC, and the CRXB08D065G3 is a 650 V 8 A third-generation device with essentially no reverse-recovery charge. Replacing silicon rectifiers with these parts raises efficiency, lowers device temperature and reduces the electromagnetic interference that hard recovery produces.
Paralleling and Thermal Spreading
High-output supplies often parallel rectifiers to share current. SiC JBS diodes have a positive temperature coefficient of forward voltage, which encourages even current sharing and avoids thermal runaway between paralleled devices. That behaviour, together with low loss, lets designers spread heat across the board rather than concentrating it in one hot component, improving reliability in the confined airflow of a rack-mounted supply.
High-Density Design
Rack space is expensive, so power supplies are pushed to ever higher density. Two levers make this possible: higher switching frequency, which shrinks magnetics and capacitors, and lower loss, which reduces the heatsink volume needed. Super Junction MOSFETs in the PFC and primary stages allow higher frequency, while SiC JBS diodes in the secondary keep rectification loss low. Together they support compact designs without sacrificing efficiency or reliability.
Digital Control
Modern supplies use digital controllers to manage the PFC and DC-DC loops, monitor temperature and current, and communicate status to the system. Fast, predictable power devices make the control loop easier to tune, and accurate current sensing near the output supports both regulation and protection. The result is a supply that responds quickly to the dynamic load steps of servers while protecting itself from faults.
Reliability and Supply
Networks are expected to run continuously for years, so component reliability and availability are essential. The junction temperature of every power device should be verified at the worst-case ambient inside the rack, and derating the devices against their maximum ratings extends service life. CR Micro manufactures its Super Junction MOSFETs and SiC diodes on its own processes, which supports consistent quality and a stable supply base. BeiLuo holds genuine CR Micro inventory for these families and coordinates replenishment against your rollout plan, shipping documentation, traceability and change notification with every order.
Getting Started
Request samples of the CRJQ80N65G4FQ and CRJSH38N65G4FQ Super Junction MOSFETs and the CRXI10D065G2 and CRXB08D065G3 SiC JBS diodes. BeiLuo will map your output power, switching frequency and density targets onto the CR Micro portfolio and propose a tailored bill of materials for your telecom or data-center power supply.